Technical parameters/drain source resistance: | 0.055 Ω |
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Technical parameters/dissipated power: | 230 W |
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Technical parameters/Input capacitance: | 2800pF @25V |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/Leakage source breakdown voltage: | 100 V |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-247 |
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Dimensions/Packaging: | TO-247 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP150NPBF
|
Infineon | 功能相似 | TO-247-3 |
INFINEON IRFP150NPBF 晶体管, MOSFET, 通用, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
|
||
IRFP150NPBF
|
IFA | 功能相似 |
INFINEON IRFP150NPBF 晶体管, MOSFET, 通用, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
|
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