Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 75 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 86A |
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Technical parameters/rise time: | 49 ns |
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Technical parameters/Input capacitance (Ciss): | 2150pF @15V(Vds) |
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Technical parameters/rated power (Max): | 75 W |
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Technical parameters/descent time: | 16 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 75W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.5 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.3 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR8726
|
International Rectifier | 功能相似 |
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
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IRLR8726PBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRLR8726PBF 晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
|
||
IRLR8726TRPBF
|
International Rectifier | 完全替代 | TO-252-3 |
HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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