Technical parameters/rated voltage (DC): | 200 V |
|
Technical parameters/rated current: | 16.0 A |
|
Technical parameters/output current: | ≤16.0 A |
|
Technical parameters/forward voltage: | 1.2V @8A |
|
Technical parameters/polarity: | Standard |
|
Technical parameters/reverse recovery time: | 85 ns |
|
Technical parameters/forward voltage (Max): | 1.2V @8A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.29 mm |
|
Dimensions/Width: | 9.65 mm |
|
Dimensions/Height: | 4.83 mm |
|
Dimensions/Packaging: | TO-263-3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MURB1620CTRT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
ON SEMICONDUCTOR MURB1620CTRT4G 标准恢复二极管, 双共阳极, 200 V, 16 A, 1.2 V, 16 A 新
|
||
MURB1620CTT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
ON SEMICONDUCTOR MURB1620CTT4G 快速/超快二极管, 双共阴极, 200 V, 8 A, 975 mV, 35 ns, 100 A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review