Technical parameters/forward voltage: | 1.6 V |
|
Technical parameters/dissipated power: | 225000 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 600 V |
|
Technical parameters/Input capacitance (Cies): | 2.8nF @25V |
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Technical parameters/rated power (Max): | 225 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 225000 mW |
|
Encapsulation parameters/installation method: | Chassis |
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Package parameters/number of pins: | 18 |
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Encapsulation parameters/Encapsulation: | E2 |
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Dimensions/Packaging: | E2 |
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Physical parameters/operating temperature: | -40℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
6MBI50L-060
|
FUJI | 功能相似 |
Trans IGBT Module N-CH 600V 50A 250000mW 19Pin Case M-616
|
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