Technical parameters/drain source resistance: | 40 Ω |
|
Technical parameters/dissipated power: | 360 mW |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/breakdown voltage: | 40 V |
|
Technical parameters/Input capacitance (Ciss): | 18pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 360 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 360 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-18 |
|
Dimensions/Packaging: | TO-18 |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bag |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
InterFET | 完全替代 |
N沟道J- FET N-CHANNEL J-FET
|
|||
|
|
Microsemi | 完全替代 | TO-18 |
N沟道J- FET N-CHANNEL J-FET
|
||
2N4857
|
Solitron Devices | 完全替代 | TO-206 |
N沟道J- FET N-CHANNEL J-FET
|
||
2N4857
|
ETC1 | 完全替代 |
N沟道J- FET N-CHANNEL J-FET
|
|||
2N4857
|
Rochester | 完全替代 |
N沟道J- FET N-CHANNEL J-FET
|
|||
2N4857
|
New Jersey Semiconductor | 完全替代 |
N沟道J- FET N-CHANNEL J-FET
|
|||
JANTX2N4857
|
Microsemi | 功能相似 | TO-206 |
N沟道J- FET N-CHANNEL J-FET
|
||
JANTX2N4857
|
Vishay Siliconix | 功能相似 | BCY |
N沟道J- FET N-CHANNEL J-FET
|
||
|
|
Microsemi | 完全替代 | TO-206 |
n Channel Jfet
|
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