Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 310mW (Ta) |
|
Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 0.265A |
|
Technical parameters/rise time: | 8.4 ns |
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Technical parameters/Input capacitance (Ciss): | 20.2pF @30V(Vds) |
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Technical parameters/rated power (Max): | 310 mW |
|
Technical parameters/descent time: | 5.1 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 310mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSN20,215
|
Philips | 功能相似 |
N 通道 MOSFET,高达 0.9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
|||
BSN20,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 MOSFET,高达 0.9A,NXP Semiconductors ### MOSFET 晶体管,NXP Semiconductors
|
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