Technical parameters/rated voltage (DC): | -300 V |
|
Technical parameters/rated current: | -500 mA |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 15 W |
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Technical parameters/breakdown voltage (collector emitter): | 300 V |
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Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 30 @50mA, 10V |
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Technical parameters/maximum current amplification factor (hFE): | 240 |
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Technical parameters/rated power (Max): | 1.56 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.6 mm |
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Dimensions/Width: | 6.1 mm |
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Dimensions/Height: | 2.3 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD350TF
|
Fairchild | 类似代替 | TO-252-3 |
PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
MJD350TF
|
Freescale | 类似代替 |
PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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