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Model STW8NC90Z
Description N沟道900V - 1.1欧姆 - 7.6A TO- 247齐纳保护PowerMESH⑩III MOSFET N-CHANNEL 900V - 1.1 ohm - 7.6A TO-247 Zener-Protected PowerMESH⑩III MOSFET
Product QR code
Brand: ST Microelectronics
Packaging TO-247
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2755) Minimum order quantity(1)
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Technical parameters/polarity:

N-Channel

 

Technical parameters/drain source voltage (Vds):

900 V

 

Technical parameters/Leakage source breakdown voltage:

900 V

 

Technical parameters/Continuous drain current (Ids):

7.6A

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-247

 

Dimensions/Packaging:

TO-247

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

Non-Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STB9NK90Z STB9NK90Z ST Microelectronics 功能相似 TO-263-3
N沟道900 V， 1.1 Ω ， 8 A， TO- 220 ， TO- 220FP ， D2PAK ， TO- 247齐纳保护超网™功率MOSFET N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH™ Power MOSFET
PDF
STP7N95K3 STP7N95K3 ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP7N95K3 功率场效应管, MOSFET, N沟道, 7.2 A, 950 V, 1.1 ohm, 10 V, 4 V
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