Technical parameters/dissipated power: | 1.69W (Ta) |
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Technical parameters/drain source voltage (Vds): | 59 V |
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Technical parameters/Input capacitance (Ciss): | 155pF @35V(Vds) |
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Technical parameters/dissipated power (Max): | 1.69W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223-3 |
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Dimensions/Packaging: | SOT-223-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NCV8440ASTT3G
|
ON Semiconductor | 功能相似 | TO-261-4 |
受保护的功率MOSFET 2.6 A， 52 V， NA ????通道，逻辑电平钳位MOSFET W / ESD保护 Protected Power MOSFET 2.6 A, 52 V, NâChannel, Logic Level, Clamped MOSFET w/ ESD Protection
|
||
NCV8440STT3G
|
ON Semiconductor | 类似代替 | SOT-223-3 |
受保护的功率MOSFET 2.6 A， 52 V， N沟道逻辑电平钳位MOSFET W / ESD保护 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection
|
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