Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.135 Ω |
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Technical parameters/dissipated power: | 500 mW |
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Technical parameters/threshold voltage: | 1.6 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/rise time: | 16 ns |
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Technical parameters/Input capacitance (Ciss): | 140pF @10V(Vds) |
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Technical parameters/rated power (Max): | 460 mW |
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Technical parameters/descent time: | 19 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 500mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDS351N
|
ON Semiconductor | 功能相似 | SOT-23-3 |
N沟道逻辑电平增强模式场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
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