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Model NDS8947
Description Small Signal Field-Effect Transistor, 4A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Product QR code
Brand: ON Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3258) Minimum order quantity(1)
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Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/rise time:

20 ns

 

Technical parameters/Input capacitance (Ciss):

690pF @15V(Vds)

 

Technical parameters/rated power (Max):

900 mW

 

Technical parameters/descent time:

19 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDS4935BZ FDS4935BZ ON Semiconductor 类似代替 SOIC-8
FAIRCHILD SEMICONDUCTOR FDS4935BZ. 场效应管, MOSFET, P沟道, -30V, SOIC
PDF
FDS4935BZ FDS4935BZ Fairchild 类似代替 SOIC-8
FAIRCHILD SEMICONDUCTOR FDS4935BZ. 场效应管, MOSFET, P沟道, -30V, SOIC
PDF

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