Technical parameters/drain source resistance: | 240 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 150 W |
|
Technical parameters/Leakage source breakdown voltage: | 100 V |
|
Technical parameters/breakdown voltage of gate source: | ±20.0 V |
|
Technical parameters/Continuous drain current (Ids): | 50.0 A |
|
Technical parameters/rise time: | 105 ns |
|
Technical parameters/descent time: | 45 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.4 mm |
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Dimensions/Width: | 9.35 mm |
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Dimensions/Height: | 4.6 mm |
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Dimensions/Packaging: | TO-263-3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB50NE10LT4
|
ST Microelectronics | 功能相似 | D2PAK |
D2PAK N-CH 100V 50A
|
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