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Description INFINEON IPB049NE7N3GATMA1 晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0044 ohm, 10 V, 3.1 V
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Brand: Infineon
Packaging TO-263
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
18.73  yuan 18.73yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8397) Minimum order quantity(1)
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Technical parameters/rated power:

150 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.0044 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

150 W

 

Technical parameters/threshold voltage:

3.1 V

 

Technical parameters/drain source voltage (Vds):

75 V

 

Technical parameters/Continuous drain current (Ids):

80A

 

Technical parameters/rise time:

11 ns

 

Technical parameters/Input capacitance (Ciss):

3570pF @37.5V(Vds)

 

Technical parameters/descent time:

8 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

150000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263

 

Dimensions/Length:

10.31 mm

 

Dimensions/Width:

9.45 mm

 

Dimensions/Height:

4.57 mm

 

Dimensions/Packaging:

TO-263

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Audio, Class D audio amplifiers, Isolated DC-DC converters (telecom and datacom systems), Motor drive and control, audio, communication and network, power management, automotive use, Or-ing switches and circuit breakers in 48V systems, Automotive, Motor Drive & Control, Communications & Networking, Power Management, Synchronous Rectification for AC-DC SMPS

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

Com

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