Technical parameters/rated voltage (DC): | 42.0 V |
|
Technical parameters/rated current: | 14.0 A |
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Technical parameters/number of output interfaces: | 1 |
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Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 53.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.9 W |
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Technical parameters/drain source voltage (Vds): | 42 V |
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Technical parameters/Leakage source breakdown voltage: | 42.0 V |
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Technical parameters/breakdown voltage of gate source: | ±14.0 V |
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Technical parameters/Continuous drain current (Ids): | 14.0 A |
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Technical parameters/output current (Max): | 14 A |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
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Dimensions/Width: | 3.5 mm |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NIF5003NT3G
|
ON Semiconductor | 类似代替 | TO-261-4 |
FET带过温和过流限制42Vclamp,14A
|
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