Technical parameters/rise time: | 13 ns |
|
Technical parameters/Input capacitance (Ciss): | 4600pF @25V(Vds) |
|
Technical parameters/descent time: | 8 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1200 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252 |
|
Dimensions/Packaging: | TO-252 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NP90N04VDG-E2-AY
|
Renesas Electronics | 功能相似 | TO-252 |
MOS场效应 MOS FIELD EFFECT TRANSISTOR
|
||
NP90N04VUG-E1-AY
|
Renesas Electronics | 功能相似 | TO-252-3 |
DPAK N-CH 60V 90A
|
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