Technical parameters/drain source resistance: | 26.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 75W (Tc) |
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Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Leakage source breakdown voltage: | 40.0 V |
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Technical parameters/breakdown voltage of gate source: | ±20.0 V |
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Technical parameters/Continuous drain current (Ids): | 38.0 A |
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Technical parameters/Input capacitance (Ciss): | 1000pF @32V(Vds) |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 75W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Rail |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD5407NT4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
N 通道功率 MOSFET，40V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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