Technical parameters/rated voltage (DC): | -20.0 V |
|
Technical parameters/rated current: | -2.10 A |
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Technical parameters/drain source resistance: | 200 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 1.10 W |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | 2.10 A |
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Technical parameters/rise time: | 13 ns |
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Technical parameters/Input capacitance (Ciss): | 300pF @10V(Vds) |
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Technical parameters/rated power (Max): | 1.1 W |
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Technical parameters/descent time: | 27 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1600 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SMD-8 |
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Dimensions/Packaging: | SMD-8 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTHD4401PT1
|
ON Semiconductor | 类似代替 | SMD-8 |
功率MOSFET -20 V， -3.0 A，双P沟道， ChipFET Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFET
|
||
NTHD4401PT1G
|
ON Semiconductor | 类似代替 | SMD-8 |
功率MOSFET -20 V， -3.0 A，双P沟道， ChipFET Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFET
|
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