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Model NTGD4169FT1G
Description 2.6A,20V,N沟道MOSFET及一个30V,1A肖特基二极管
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.09  yuan 1.09yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1810) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

900 mW

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

2.6A

 

Technical parameters/rise time:

4 ns

 

Technical parameters/Input capacitance (Ciss):

295pF @15V(Vds)

 

Technical parameters/rated power (Max):

900 mW

 

Technical parameters/descent time:

4 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-25 ℃

 

Technical parameters/dissipated power (Max):

900mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SOT-23-6

 

Dimensions/Length:

3 mm

 

Dimensions/Width:

1.5 mm

 

Dimensions/Height:

0.94 mm

 

Dimensions/Packaging:

SOT-23-6

 

Physical parameters/operating temperature:

-25℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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