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Model NTHD5903T1G

Description 3A,-20V,双P沟道MOSFET

Brand: ON Semiconductor

Packaging SMD-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-20.0 V
Technical parameters/rated current:	-2.20 A
Technical parameters/number of channels:	2
Technical parameters/drain source resistance:	215 mΩ
Technical parameters/polarity:	Dual P-Channel
Technical parameters/dissipated power:	1.1 W
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Leakage source breakdown voltage:	20 V
Technical parameters/breakdown voltage of gate source:	±12.0 V
Technical parameters/Continuous drain current (Ids):	3.00 A
Technical parameters/rise time:	35 ns
Technical parameters/rated power (Max):	1.1 W
Technical parameters/descent time:	35 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	1100 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SMD-8
Dimensions/Length:	3.05 mm
Dimensions/Width:	1.65 mm
Dimensions/Height:	1.05 mm
Dimensions/Packaging:	SMD-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99