Technical parameters/output current: | 120 mA |
|
Technical parameters/power supply current: | 29.1 mA |
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Technical parameters/number of channels: | 1 |
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Technical parameters/bandwidth: | 900 MHz |
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Technical parameters/conversion rate: | 2.30 kV/μs |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 4.5V ~ 12V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC |
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Dimensions/Packaging: | SOIC |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LMH6553MR/NOPB
|
National Semiconductor | 完全替代 | PSOP-8 |
TEXAS INSTRUMENTS LMH6553MR/NOPB 差分放大器, 输出限制钳位, 1 放大器, 1 dB, 900 MHz, -40 °C, 125 °C
|
||
LMH6553MR/NOPB
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS LMH6553MR/NOPB 差分放大器, 输出限制钳位, 1 放大器, 1 dB, 900 MHz, -40 °C, 125 °C
|
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