Technical parameters/power supply voltage (DC): | 3.30 V, 3.60 V (max) |
|
Technical parameters/clock frequency: | 70.0 GHz |
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Technical parameters/access time: | 70.0 ns |
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Technical parameters/memory capacity: | 32000000 B |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TFBGA-48 |
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Dimensions/Packaging: | TFBGA-48 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Numonyx | 完全替代 | TFBGA-48 |
NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8Bit/16Bit 70ns 48Pin TFBGA Tray
|
||
|
|
ST Microelectronics | 完全替代 | TFBGA-48 |
NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8Bit/16Bit 70ns 48Pin TFBGA Tray
|
||
M29DW323DT70ZE6E
|
Micron | 完全替代 | TFBGA-48 |
MICRON M29DW323DT70ZE6E 闪存, 引导块, 非, 32 Mbit, 4M x 8位 / 2M x 16位, CFI, 并行, TFBGA, 48 引脚
|
||
M29W320DB70ZE6E
|
Numonyx | 完全替代 | TFBGA-48 |
NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8Bit/16Bit 70ns 48Pin TFBGA Tray
|
||
|
|
ST Microelectronics | 功能相似 | TFBGA |
NOR Flash Parallel 3V/3.3V 32Mbit 4M/2M x 8Bit/16Bit 70ns 48Pin TFBGA T/R
|
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