Chip AI consultant
Technical parameters/drain source voltage (Vds): | 60 V |
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Encapsulation parameters/Encapsulation: | TO-263-2 |
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Dimensions/Packaging: | TO-263-2 |
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Other/Product Catalog: | MOS(Field Effect Transistor |
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Other/continuous drain current (Id) (at 25 ° C): | 130A(Tc) |
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Other/leakage source voltage (Vdss): | 60V |
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Other/Gate Source Threshold Voltage: | 4V @ 250uA |
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Other/leakage source conduction resistance: | 6.8 mΩ @ 65A,10V |
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Other/Type: | N channel |
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Other/maximum power dissipation (Ta): | 230W(Tc) |
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Other/Product Code: | C180376 |
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Other/Packaging Specifications: | TO-263-2 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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