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Model STF10LN80K5
Description STF10LN80K5 系列 800 V 8 A 0.63 Ohm N-沟道 MDmesh™ K5 功率 Mosfet-TO-220FP
Product QR code
Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Rail, Tube
Standard packaging quantity 1
9.67  yuan 9.67yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5971) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.55 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

25 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

800 V

 

Technical parameters/Continuous drain current (Ids):

8A

 

Technical parameters/rise time:

10 ns

 

Technical parameters/Input capacitance (Ciss):

427pF @100V(Vds)

 

Technical parameters/descent time:

13 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

25W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Rail, Tube

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2016/06/20

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SPA08N80C3XKSA1 SPA08N80C3XKSA1 Infineon 功能相似 TO-220-3
INFINEON SPA08N80C3XKSA1 功率场效应管, MOSFET, N沟道, 8 A, 800 V, 650 mohm, 10 V, 3 V

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