Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 11 mΩ |
|
Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 110 W |
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Technical parameters/drain source voltage (Vds): | 33 V |
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Technical parameters/Leakage source breakdown voltage: | 33 V |
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Technical parameters/Continuous drain current (Ids): | 80A |
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Technical parameters/rise time: | 248 ns |
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Technical parameters/Input capacitance (Ciss): | 1860pF @25V(Vds) |
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Technical parameters/rated power (Max): | 110 W |
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Technical parameters/descent time: | 85 ns |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 110W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.4 mm |
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Dimensions/Width: | 4.6 mm |
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Dimensions/Height: | 15.75 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPI80N03S2L-06
|
Infineon | 功能相似 | TO-262-3-1 |
的OptiMOS功率三极管 OptiMOS Power-Transistor
|
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