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Model JANS2N3867
Description PNP硅低功率晶体管 PNP SILICON LOW POWER TRANSISTOR
Product QR code
Brand: Microsemi
Packaging TO-5
Delivery time
Packaging method Tray
Standard packaging quantity 1
1922.23  yuan 1922.23yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1453) Minimum order quantity(1)
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Technical parameters/dissipated power:

1 W

 

Technical parameters/breakdown voltage (collector emitter):

40 V

 

Technical parameters/minimum current amplification factor (hFE):

40 @1.5A, 2V

 

Technical parameters/rated power (Max):

1 W

 

Technical parameters/operating temperature (Max):

200 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-5

 

Dimensions/Packaging:

TO-5

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 200℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tray

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
JANTX2N3867S JANTX2N3867S Microsemi 完全替代 TO-205
硅PNP功率晶体管 Silicon PNP Power Transistors
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