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Specification parameters
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Technical parameters/power supply voltage (DC):

3.00V (min)

Technical parameters/output current:

4.00 mA

Technical parameters/power supply current:

190 mA

Technical parameters/number of channels:

Technical parameters/number of pins:

Technical parameters/dissipated power:

2440 mW

Technical parameters/data rate:

3.12 Gbps

Technical parameters/Input capacitance:

1.7 pF

Technical parameters/Input voltage (Max):

0.1 V

Technical parameters/input voltage (Min):

0.1 V

Technical parameters/output voltage (Max):

0.45 V

Technical parameters/input current (Min):

10 µA

Technical parameters/operating temperature (Max):

85 ℃

Technical parameters/operating temperature (Min):

-40 ℃

Technical parameters/dissipated power (Max):

2440 mW

Technical parameters/power supply voltage:

3V ~ 3.6V

Technical parameters/power supply voltage (Max):

3.6 V

Technical parameters/power supply voltage (Min):

3 V

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

WFQFN-40

Dimensions/Length:

6 mm

Dimensions/Width:

6 mm

Dimensions/Height:

0.8 mm

Dimensions/Packaging:

WFQFN-40

Physical parameters/operating temperature:

-40℃ ~ 85℃

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Other/Manufacturing Applications:

LVDS

Compliant with standards/RoHS standa

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	DS25BR440TSQX/NOPB	National Semiconductor	类似代替		具有发送预强调和接收均衡功能的 3.125Gbps 四路 LVDS 缓冲器 40-WQFN -40 to 85
	DS25BR440TSQX/NOPB	TI	类似代替	WFQFN-40	具有发送预强调和接收均衡功能的 3.125Gbps 四路 LVDS 缓冲器 40-WQFN -40 to 85

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643