Technical parameters/polarity: | NPN+PNP |
|
Technical parameters/dissipated power: | 0.408 W |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 10V |
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Technical parameters/rated power (Max): | 339 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 408 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-963 |
|
Dimensions/Packaging: | SOT-963 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PEMD12,115
|
Nexperia | 功能相似 | SOT-666-6 |
NXP PEMD12,115 单晶体管 双极, BRT, NPN, PNP, 50 V, 300 mW, 100 mA, 80 hFE
|
||
PEMD12,115
|
NXP | 功能相似 | SOT-666 |
NXP PEMD12,115 单晶体管 双极, BRT, NPN, PNP, 50 V, 300 mW, 100 mA, 80 hFE
|
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