Technical parameters/rated voltage (DC): | 500 V |
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Technical parameters/rated current: | 350 mA |
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Technical parameters/drain source resistance: | 5.30 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.5 W |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Leakage source breakdown voltage: | 500 V |
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Technical parameters/breakdown voltage of gate source: | ±30.0 V |
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Technical parameters/Continuous drain current (Ids): | 350 mA |
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Technical parameters/rise time: | 25 ns |
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Technical parameters/Input capacitance (Ciss): | 230pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1.5 W |
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Technical parameters/descent time: | 25 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.5W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-92-3 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 8 mm |
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Dimensions/Packaging: | TO-92-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Box (TB) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQNL2N50BBU
|
ON Semiconductor | 功能相似 | TO-226-3 |
N沟道 500V 350mA
|
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