Technical parameters/polarity: | P-CH |
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Technical parameters/dissipated power: | 650mW (Ta) |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/rise time: | 60 ns |
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Technical parameters/Input capacitance (Ciss): | 3600pF @10V(Vds) |
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Technical parameters/descent time: | 100 ns |
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Technical parameters/dissipated power (Max): | 650mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOP-8 |
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Dimensions/Packaging: | SOP-8 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not For New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RRH100P03GZETB
|
ROHM Semiconductor | 类似代替 | SOP-8 |
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.009 ohm, -10 V, -2.5 V
|
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