Technical parameters/output current: | ≤30 mA |
|
Technical parameters/power supply current: | 1.3 mA |
|
Technical parameters/number of circuits: | 2 |
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Technical parameters/number of channels: | 2 |
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Technical parameters/Common Mode Rejection Ratio: | 63 dB |
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Technical parameters/input compensation drift: | 1.00 µV/K |
|
Technical parameters/conversion rate: | 1.30 V/μs |
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Technical parameters/gain bandwidth product: | 1.5 MHz |
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Technical parameters/input compensation voltage: | 110 µV |
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Technical parameters/input bias current: | 0.15 pA |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/gain bandwidth: | 1.5 MHz |
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Technical parameters/Common Mode Rejection Ratio (Min): | 63 dB |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Rail, Tube |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LMC6492BEM/NOPB
|
National Semiconductor | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LMC6492BEM/NOPB 运算放大器, 双路, 1.5 MHz, 2个放大器, 1.3 V/µs, 5V 至 15V, SOIC, 8 引脚
|
||
LMC6492BEM/NOPB
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS LMC6492BEM/NOPB 运算放大器, 双路, 1.5 MHz, 2个放大器, 1.3 V/µs, 5V 至 15V, SOIC, 8 引脚
|
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