Technical parameters/power supply voltage (DC): | 28.0 V |
|
Technical parameters/rated voltage (DC): | 65.0 V |
|
Technical parameters/rated current: | 25.0 A |
|
Technical parameters/drain source voltage (Vds): | 65.0 V |
|
Technical parameters/Leakage source breakdown voltage: | 65.0V (min) |
|
Technical parameters/Continuous drain current (Ids): | 25.0 A |
|
Technical parameters/gain: | 18.0 dB |
|
Encapsulation parameters/installation method: | Flange |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
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BLF246
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Ampleon USA | 功能相似 |
VHF功率MOS晶体管 VHF power MOS transistor
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MRF173
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New Jersey Semiconductor | 功能相似 |
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M/A-Com | 功能相似 | 316-01 |
N-CHANNEL BROADBAND RF POWER MOSFETs
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MRF173CQ
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Freescale | 功能相似 |
N-CHANNEL BROADBAND RF POWER MOSFETs
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Advanced Semiconductor | 功能相似 | 211-11 |
N沟道MOS宽带射频功率场效应管 N-CHANNEL MOS BROADBAND RF POWER FET
|
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