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Model IRLW630ATM
Description Trans MOSFET N-CH 200V 9A 3Pin(2+Tab) D2PAK T/R
Product QR code
Brand: Fairchild
Packaging TO-262-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
18.6  yuan 18.6yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8402) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

200 V

 

Technical parameters/rated current:

9.00 A

 

Technical parameters/drain source resistance:

400 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.1W (Ta), 69W (Tc)

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

5.00 A

 

Technical parameters/Input capacitance (Ciss):

755pF @25V(Vds)

 

Technical parameters/rated power (Max):

3.1 W

 

Technical parameters/dissipated power (Max):

3.1W (Ta), 69W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-262-3

 

Dimensions/Packaging:

TO-262-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRLW630A IRLW630A Fairchild 功能相似 D2PAK
先进的功率MOSFET ADVANCED POWER MOSFET
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