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Model STB21N65M5
Description STB21N series N-channel 710 V 17 A 179 mOhm 125 W power Mosfet - D2PAK
Product QR code
Brand: ST Microelectronics
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
24.09  yuan 24.09yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5546) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.15 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

125 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Leakage source breakdown voltage:

650 V

 

Technical parameters/Continuous drain current (Ids):

17A

 

Technical parameters/rise time:

10 ns

 

Technical parameters/Input capacitance (Ciss):

1950pF @100V(Vds)

 

Technical parameters/rated power (Max):

125 W

 

Technical parameters/descent time:

12 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

125W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10.75 mm

 

Dimensions/Width:

10.4 mm

 

Dimensions/Height:

4.6 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

Cu

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