Technical parameters/peak pulse power: | 500 W |
|
Technical parameters/minimum reverse breakdown voltage: | 14.25 V |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | B |
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Dimensions/Packaging: | B |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Manufacturing Applications: | General |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Sensitron Semiconductor | 完全替代 | 2 |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
||
|
|
Microsemi | 完全替代 | B |
双向瞬态抑制器 BIDIRECTIONAL TRANSIENT SUPPRESSORS
|
||
JANTX1N6110A
|
Microsemi | 类似代替 | B |
Trans Voltage Suppressor Diode, 500W, 11.4V V(RWM), Bidirectional, 1 Element, Silicon,
|
||
|
|
Microsemi | 类似代替 | B |
Trans Voltage Suppressor Diode, 500W, 11.4V V(RWM), Bidirectional, 1 Element, Silicon,
|
||
|
|
Semtech Corporation | 类似代替 | Axial |
Trans Voltage Suppressor Diode, 500W, 11.4V V(RWM), Bidirectional, 1 Element, Silicon,
|
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