Technical parameters/power supply voltage (DC): | 5.50 V |
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Technical parameters/power supply current: | 7.5 mA |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 8 |
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Technical parameters/Common Mode Rejection Ratio: | 100 dB |
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Technical parameters/input compensation drift: | 30.0 nV/K |
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Technical parameters/conversion rate: | 80.0 V/μs |
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Technical parameters/gain bandwidth product: | 90 MHz |
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Technical parameters/input compensation voltage: | 4 µV |
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Technical parameters/input bias current: | 3 pA |
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Technical parameters/available channels: | S, D |
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Technical parameters/input current (Min): | 9.5 mA |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/gain bandwidth: | 90 MHz |
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Technical parameters/Common Mode Rejection Ratio (Min): | 100 dB |
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Technical parameters/power supply voltage: | 5.5 V |
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Technical parameters/power supply voltage (Max): | 5V ~ 7V |
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Technical parameters/power supply voltage (Min): | 2.7 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -40℃ ~ 125℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Testing and Measurement, Signal Processing, Sensing and Instrumentation |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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