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Model KSH210TF
Description ON Semiconductor KSH210TF, PNP transistor, 5 A, Vce=25 V, HFE: 10, 0.1 MHz, 3-pin DPAK (TO-252) package
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.11  yuan 1.11yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1289) Minimum order quantity(1)
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Technical parameters/frequency:

65 MHz

 

Technical parameters/dissipated power:

1.4 W

 

Technical parameters/breakdown voltage (collector emitter):

25 V

 

Technical parameters/minimum current amplification factor (hFE):

45 @2A, 1V

 

Technical parameters/rated power (Max):

1.4 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

1400 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Length:

6.6 mm

 

Dimensions/Width:

6.1 mm

 

Dimensions/Height:

2.3 mm

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MJD210G MJD210G Freescale 完全替代 TO-252-3
ON SEMICONDUCTOR MJD210G 单晶体管 双极, PNP, 25 V, 65 MHz, 1.4 W, 5 A, 3 hFE
PDF
MJD210G MJD210G ON Semiconductor 完全替代 TO-252-3
ON SEMICONDUCTOR MJD210G 单晶体管 双极, PNP, 25 V, 65 MHz, 1.4 W, 5 A, 3 hFE
PDF

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