Technical parameters/drain source resistance: | 75 Ω |
|
Technical parameters/breakdown voltage: | 30 V |
|
Technical parameters/Input capacitance (Ciss): | 45pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 350 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-226-3 |
|
Dimensions/Packaging: | TO-226-3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTXV2N5116
|
Solitron Devices | 功能相似 |
Trans JFET P-CH
|
|||
JANTXV2N5116
|
Microsemi | 功能相似 | TO-18 |
Trans JFET P-CH
|
||
PMBFJ176
|
NXP | 功能相似 | SOT-23 |
P-channel silicon field-effect transistors
|
||
|
|
Philips | 功能相似 |
P-channel silicon field-effect transistors
|
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PMBFJ177
|
NXP | 功能相似 | SOT-23-3 |
P-channel silicon field-effect transistors
|
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