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Technical parameters/forward voltage: | 1.2 V |
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Technical parameters/reverse recovery time: | 2000 ns |
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Technical parameters/Maximum reverse voltage (Vrrm): | 600 V |
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Technical parameters/forward current: | 3 A |
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Technical parameters/maximum reverse leakage current (Ir): | 5 uA |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -50 ℃ |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-201AD-2 |
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Dimensions/Packaging: | DO-201AD-2 |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 1400 |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5406
|
ON Semiconductor | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
||
1N5406
|
Taiwan Semiconductor | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
||
|
|
Taitron | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
||
1N5406
|
Motorola | 功能相似 | 267-03 |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
||
|
1N5406
|
Central Semiconductor | 功能相似 | CASE 103 |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
||
1N5406
|
NTE Electronics | 功能相似 |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
|||
1N5406
|
Fairchild | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
||
|
1N5406
|
ChendaHang | 功能相似 | DO-201 |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
||
1N5406
|
Multicomp | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406.. 标准功率二极管, 单, 600 V, 3 A, 1.2 V, 200 A
|
||
P300J-E3/73
|
Vishay Semiconductor | 完全替代 | DO-201AD |
Diode Switching 600V 3A 2Pin DO-201AD Ammo
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VISHAY | 完全替代 | DO-201AD |
Diode Switching 600V 3A 2Pin DO-201AD Ammo
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