Technical parameters/clamp voltage: | 77 V |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 56V |
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Technical parameters/maximum reverse breakdown voltage: | 53.2 V |
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Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 53.2 V |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | SMB |
|
Dimensions/Packaging: | SMB |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Minimum Packaging: | 750 |
|
Compliant with standards/RoHS standards: | RoHS-conform |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
P6SMB56AHE3/52
|
VISHAY | 完全替代 | SMB |
Diode TVS Single Uni-Dir 47.8V 600W 2Pin SMB T/R
|
||
P6SMB56AHE3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 47.8V 600W 2Pin SMB T/R
|
||
P6SMB56CA-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB56CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB56CA-E3/5B
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 47.8V 600W 2Pin SMB T/R
|
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