Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 180 @1mA, 6V |
|
Technical parameters/maximum current amplification factor (hFE): | 180 @1mA, 6V |
|
Technical parameters/rated power (Max): | 200 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 200 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-323-3 |
|
Dimensions/Length: | 2.2 mm |
|
Dimensions/Width: | 1.35 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-323-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PA1576R
|
NXP | 功能相似 | SOT-323 |
Trans GP BJT PNP 50V 0.15A 200mW 3Pin SC-70
|
||
|
|
Nexperia | 功能相似 |
Trans GP BJT PNP 50V 0.15A 200mW 3Pin SC-70
|
|||
2PA1576R,115
|
NXP | 完全替代 | SOT-323-3 |
双极晶体管 - 双极结型晶体管(BJT) TRANS GP TAPE-7
|
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