Encapsulation parameters/Encapsulation: | SOT-163 |
|
Dimensions/Packaging: | SOT-163 |
|
Other/maximum source drain voltage VdsDrain Source Voltage: | -20V |
|
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: | 12V |
|
Other/Maximum Drain Current IdDrain Current: | -4.5A |
|
Other/source drain on resistance RdsDrain Source On State Resistance: | 0.045Ω @-2.5A,-4V |
|
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: | -0.5--1.5V |
|
Other/dissipated power PdPower Dissipation: | 200mW/0.2W |
|
Other/Specification PDF: | __ |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review