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Model PBSS4350SPN,115
Description PBSS4350SPN series 50 V 2.7 A NPN/PNP low VCEsat (BISS) transistor - SOIC-8
Product QR code
Brand: NXP
Packaging SOT-96-1
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.09  yuan 1.09yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9593) Minimum order quantity(1)
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Technical parameters/polarity:

NPN+PNP

 

Technical parameters/dissipated power:

1.43 W

 

Technical parameters/breakdown voltage (collector emitter):

50 V

 

Technical parameters/Maximum allowable collector current:

2.7A

 

Technical parameters/rated power (Max):

750 mW

 

Technical parameters/dissipated power (Max):

1430 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOT-96-1

 

Dimensions/Packaging:

SOT-96-1

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS4350SPN PBSS4350SPN Nexperia 类似代替 SOT-96
NPN/PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压双 NPN/PNP 双极结点晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
PDF
PBSS4350SPN PBSS4350SPN NXP 类似代替 SOT-96
NPN/PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压双 NPN/PNP 双极结点晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
PDF

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