Technical parameters/number of pins: | 3 |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 390 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 2.7A |
|
Technical parameters/minimum current amplification factor (hFE): | 200 |
|
Technical parameters/DC current gain (hFE): | 300 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1100 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Length: | 3 mm |
|
Dimensions/Width: | 1.4 mm |
|
Dimensions/Height: | 1.1 mm |
|
Dimensions/Packaging: | SOT-23 |
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Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Other/Manufacturing Applications: | Industrial, Automotive, Power Management, Consumer Electronics, Motor Drive & Control |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS4021PT
|
NXP | 类似代替 | SOT-23 |
PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
|
||
PBSS4032PT
|
NXP | 类似代替 | SOT-23 |
NXP PBSS4032PT 单晶体管 双极, PNP, -30 V, 160 MHz, 390 mW, -2.4 A, 320 hFE
|
||
PBSS4041NT
|
NXP | 类似代替 | SOT-23 |
NXP PBSS4041NT 单晶体管 双极, NPN, 60 V, 175 MHz, 390 mW, 3.8 A, 500 hFE
|
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