Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 1.1 W |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 4A |
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Technical parameters/minimum current amplification factor (hFE): | 300 |
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Technical parameters/DC current gain (hFE): | 300 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SuperSOT |
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Dimensions/Packaging: | SuperSOT |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2014/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS302ND,115
|
NXP | 功能相似 | SC-74-6 |
NPN 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
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