Technical parameters/minimum current amplification factor (hFE): | 120 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 2.6 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Length: | 6.7 mm |
|
Dimensions/Width: | 3.7 mm |
|
Dimensions/Height: | 1.8 mm |
|
Dimensions/Packaging: | SOT-223 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBHV9215Z
|
NXP | 功能相似 | SOT-223 |
NXP PBHV9215Z 单晶体管 双极, PNP, -150 V, 35 MHz, 730 mW, -2 A, 180 hFE
|
||
PBSS4021NZ
|
NXP | 类似代替 | SOT-223 |
NXP PBSS4021NZ 单晶体管 双极, NPN, 20 V, 95 MHz, 770 mW, 8 A, 550 hFE
|
||
PBSS4021PZ
|
Nexperia | 类似代替 | SOT-223 |
NXP PBSS4021PZ 单晶体管 双极, PNP, -20 V, 85 MHz, 770 mW, -6.6 A, 400 hFE
|
||
PBSS4021PZ
|
NXP | 类似代替 | SOT-223 |
NXP PBSS4021PZ 单晶体管 双极, PNP, -20 V, 85 MHz, 770 mW, -6.6 A, 400 hFE
|
||
PBSS4032NZ
|
NXP | 类似代替 | SOT-223 |
NXP PBSS4032NZ 单晶体管 双极, NPN, 30 V, 145 MHz, 700 mW, 4.9 A, 500 hFE
|
||
PBSS4032NZ
|
Nexperia | 类似代替 | SOT-223 |
NXP PBSS4032NZ 单晶体管 双极, NPN, 30 V, 145 MHz, 700 mW, 4.9 A, 500 hFE
|
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