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Model PBSS4630PA
Description Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
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Brand: Nexperia
Packaging SOT-1061
Delivery time
Packaging method
Standard packaging quantity 1
1.28  yuan 1.28yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2909) Minimum order quantity(1)
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Technical parameters/minimum current amplification factor (hFE):

180

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2.1 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-1061

 

Dimensions/Length:

2.1 mm

 

Dimensions/Width:

2.1 mm

 

Dimensions/Height:

0.65 mm

 

Dimensions/Packaging:

SOT-1061

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS4330PA PBSS4330PA Nexperia 类似代替 HUSON-3
NXP PBSS4330PA 单晶体管 双极, NPN, 30 V, 210 MHz, 500 mW, 3 A, 465 hFE
PDF
PBSS4330PA PBSS4330PA NXP 类似代替 SOT-1061
NXP PBSS4330PA 单晶体管 双极, NPN, 30 V, 210 MHz, 500 mW, 3 A, 465 hFE
PDF

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