Technical parameters/frequency: | 100 MHz |
|
Technical parameters/rated power: | 0.48 W |
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Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 0.48 W |
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Technical parameters/breakdown voltage (collector emitter): | 20 V |
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Technical parameters/minimum current amplification factor (hFE): | 250 @500mA, 2V |
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Technical parameters/rated power (Max): | 480 mW |
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Technical parameters/DC current gain (hFE): | 450 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 480 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Motor drive and control, consumer electronics, power management, lighting, industrial, signal processing |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5120T
|
Nexperia | 功能相似 | TO-236 |
低饱和电压 PNP 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia
|
||
PBSS5120T,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP PBSS5120T,215 单晶体管 双极, PNP, -20 V, 100 MHz, 300 mW, -1 A, 200 hFE
|
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