Technical parameters/frequency: | 185 MHz |
|
Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 300 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 20 V |
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Technical parameters/Maximum allowable collector current: | 2A |
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Technical parameters/minimum current amplification factor (hFE): | 155 @1A, 2V |
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Technical parameters/maximum current amplification factor (hFE): | 220 @1mA, 2V |
|
Technical parameters/rated power (Max): | 900 mW |
|
Technical parameters/DC current gain (hFE): | 495 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 900 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-666 |
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Dimensions/Packaging: | SOT-666 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | SOT-666 |
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PBSS5220V
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Philips | 功能相似 |
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PBSS5220V
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Nexperia | 功能相似 |
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PBSS5220V,115
|
NXP | 功能相似 | SOT-666 |
双极晶体管 - 双极结型晶体管(BJT) LO VCESAT(BISS)TRANS TAPE-7
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||
PBSS5220V,115
|
Nexperia | 功能相似 | SOT-666 |
双极晶体管 - 双极结型晶体管(BJT) LO VCESAT(BISS)TRANS TAPE-7
|
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