Technical parameters/dissipated power: | 1 W |
|
Technical parameters/drain source voltage (Vds): | 240 V |
|
Technical parameters/rise time: | 8 ns |
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Technical parameters/Input capacitance (Ciss): | 125pF @25V(Vds) |
|
Technical parameters/descent time: | 24 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-92-3 |
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Dimensions/Packaging: | TO-92-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Ammo Pack |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VN2410L-G
|
Microchip | 类似代替 | TO-92-3 |
Supertex N 通道增强型模式 MOSFET 晶体管 Microchip Supertex 系列 N 通道增强型模式（常闭）DMOS FET 晶体管适合各种需要低阈值电压、高击穿电压、高输入阻抗，低输入电容和快速切换速度的开关和放大应用。 ### MOSFET 晶体管，Microchip
|
||
VN2410L-G
|
Supertex | 类似代替 | TO-92-3 |
Supertex N 通道增强型模式 MOSFET 晶体管 Microchip Supertex 系列 N 通道增强型模式（常闭）DMOS FET 晶体管适合各种需要低阈值电压、高击穿电压、高输入阻抗，低输入电容和快速切换速度的开关和放大应用。 ### MOSFET 晶体管，Microchip
|
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