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Model PD84008-E
Description RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Product QR code
Brand: ST Microelectronics
Packaging PowerSO-10RF
Delivery time
Packaging method Tube
Standard packaging quantity 1
91.6  yuan 91.6yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6935) Minimum order quantity(1)
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Technical parameters/frequency:

870 MHz

 

Technical parameters/rated current:

7 A

 

Technical parameters/dissipated power:

79000 mW

 

Technical parameters/drain source voltage (Vds):

25 V

 

Technical parameters/output power:

2 W

 

Technical parameters/gain:

16.2 dB

 

Technical parameters/test current:

250 mA

 

Technical parameters/Input capacitance (Ciss):

56pF @7V(Vds)

 

Technical parameters/operating temperature (Max):

165 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

79000 mW

 

Technical parameters/rated voltage:

25 V

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

PowerSO-10RF

 

Dimensions/Packaging:

PowerSO-10RF

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PD84008S-E PD84008S-E ST Microelectronics 类似代替 PowerSO-10RF
RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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